The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 11, 2011
Applicants:

Toshiyuki Kashiwagi, Tokyo, JP;

Yoshihiro Akimoto, Chiba, JP;

Kimihiro Saito, Kanagawa, JP;

Akiya Saito, Kanagawa, JP;

Inventors:

Toshiyuki Kashiwagi, Tokyo, JP;

Yoshihiro Akimoto, Chiba, JP;

Kimihiro Saito, Kanagawa, JP;

Akiya Saito, Kanagawa, JP;

Assignee:

Sony Corporationn, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B 7/00 (2006.01); G11B 7/24085 (2013.01); G11B 7/007 (2006.01); G11B 7/26 (2006.01);
U.S. Cl.
CPC ...
G11B 7/00736 (2013.01); G11B 7/24085 (2013.01); G11B 7/263 (2013.01); G11B 7/261 (2013.01);
Abstract

An optical recording medium and a manufacturing method for forming the optical recording medium is provided. The optical recording medium includes a bar code-shaped reflection pattern that includes high reflection rate regions and low reflection rate regions and information is recorded with the bar code-shaped reflection pattern. The low reflection rate region is formed with pit strings. The high reflection rate region and the low reflection rate region are formed to satisfy: S+M/2≦0.6H, where a signal level of a reproduction signal obtained from a reflection light in the high reflection rate region is denoted as 'H', a signal level of a reproduction signal obtained from a reflection light in the low reflection rate region is denoted as 'S', and a degree of modulation of the reproduction signal obtained from the reflection light in the low reflection rate region is denoted as “M”.


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