The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jan. 31, 2014
Applicant:

SK Hynix Memory Solutions Inc., San Jose, CA (US);

Inventors:

Meng-Kun Lee, Cupertino, CA (US);

Yingquan Wu, Palo Alto, CA (US);

Assignee:

SK hynix memory solutions inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/12 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/04 (2013.01); G11C 11/56 (2013.01); G11C 16/12 (2013.01); G11C 16/34 (2013.01);
Abstract

An indication to store a data value in Flash memory is received. An accurate coarse write is performed on the Flash memory, including by: storing a first voltage level in the Flash memory and setting a configuration setting of the Flash memory to a first setting. The first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value. A fine write is performed on the Flash memory, including by: storing a second voltage level in the Flash memory and setting the configuration setting of the Flash memory to a second setting. The second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value.


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