The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 31, 2013
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Dong-Kyo Shim, Seoul, KR;
Min-Seok Kim, Hwaseong-si, KR;
Tae-Young Kim, Seoul, KR;
Ki-Tae Park, Seongnam-si, KR;
Jae-Yong Jeong, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, includes performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. At least some of the intermediate program states have threshold voltage distributions that partially overlap each other.