The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Dec. 19, 2012
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

John P. Bettencourt, Danvers, MA (US);

Frank J. DeCaro, Nashua, NH (US);

John C. Tremblay, Lancaster, MA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/00 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/26 (2013.01); H03F 1/00 (2013.01);
Abstract

A current mirror circuit having formed in a semiconductor: a pair of transistors arranged to produce an output current through an output one of the transistors proportional to a reference current fed to an input one of the pair of transistors; a resistor comprising a pair of spaced electrodes in ohmic contact with the semiconductor, one of such pair of electrodes of the resistor being coupled to the input one of the pair of transistors; and circuitry for producing a voltage across the pair of electrodes of the resistor, such circuitry placing the resistor into saturation producing current through a region in the semiconductor between the pair of spaced ohmic contacts, such produced current being fed to the input one of the transistors as the reference current for the current mirror.


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