The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Dec. 18, 2012
Applicant:

Zachary M. Griffith, Thousand Oaks, CA (US);

Inventor:

Zachary M. Griffith, Thousand Oaks, CA (US);

Assignee:

Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H03F 1/22 (2006.01); H01L 23/482 (2006.01); H03F 3/19 (2006.01); H01L 21/768 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03F 1/22 (2013.01); H01L 2924/0002 (2013.01); H01L 29/737 (2013.01); H01L 23/4824 (2013.01); H01L 29/778 (2013.01); H03F 3/19 (2013.01); H01L 23/481 (2013.01); H01L 21/76877 (2013.01);
Abstract

A transistor, a method and an apparatus for forming multiple connections to a transistor for reduced gate (FET/HEMT) or base (BJT/HBT) parasitics, and improved multi-finger transistor thermal impedance. Providing for a method and an apparatus that reduces a transistor's parasitics and reduces a transistor's thermal impedance, resulting in higher device bandwidths and higher output power. More particularly, providing for a method and an apparatus for applying compact, multiple connections to the gate of a FET (or HEMT) or the base of a BJT (or HBT) from many sides resulting in reduced parasitics and improved transistor thermal impedance.


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