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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8853829 B1

PDFFull Text
Date of Patent:
Oct. 07, 2014

Filed:

Mar. 08, 2013

Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device

Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Makoto Miyoshi, Inazawa, JP;

Mikiya Ichimura, Ichinomiya, JP;

Sota Maehara, Nagoya, JP;

Mitsuhiro Tanaka, Tsukuba, JP;

Assignee:

NGK Insulators, Ltd, Nagoya, JP;

Attorney:

Burr & Brown, PLLC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil Prasad

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); C30B 29/40 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); C30B 23/02 (2006.01); H01L 29/15 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0661 (2013.01); C30B 29/403 (2013.01); C30B 25/183 (2013.01); H01L 21/02516 (2013.01); H01L 21/02381 (2013.01); H01L 21/0262 (2013.01); C30B 23/025 (2013.01); H01L 29/2003 (2013.01); H01L 29/155 (2013.01); H01L 21/02458 (2013.01); H01L 21/02365 (2013.01); H01L 21/02507 (2013.01); H01L 21/02439 (2013.01); C23C 16/303 (2013.01); H01L 21/02494 (2013.01); H01L 21/02433 (2013.01); H01L 21/0254 (2013.01);
Abstract

Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of AlGaN formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0≦yy≦0.2.

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