The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 11, 2013
Applicant:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Inventor:
Martin Domeij, Sollentuna, SE;
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/0657 (2013.01); H01L 29/402 (2013.01); H01L 29/732 (2013.01);
Abstract
In at least one aspect, an apparatus can include a silicon carbide material, a base contact disposed on a first portion of the silicon carbide material, and an emitter contact disposed on a second portion of the silicon carbide material. The apparatus can also include a dielectric layer disposed on the silicon carbide material and disposed between the base contact and the emitter contact, and a surface electrode disposed on the dielectric layer and separate from the base contact and the emitter contact.