The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 15, 2011
Applicants:

Daisuke Okamoto, Tokyo, JP;

Junichi Fujikata, Tokyo, JP;

Inventors:

Daisuke Okamoto, Tokyo, JP;

Junichi Fujikata, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 31/105 (2006.01); H01L 21/205 (2006.01); H01L 31/103 (2006.01); G02F 1/00 (2006.01); G02B 6/12 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); H01L 31/1035 (2013.01); G02B 6/4214 (2013.01); G02F 1/00 (2013.01); G02B 6/4246 (2013.01); H01L 31/105 (2013.01);
Abstract

The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.


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