The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Nov. 30, 2012
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Jae-Han Cha, Cheongju-si, KR;
Kyung-Ho Lee, Cheongju-si, KR;
Sun-Goo Kim, Cheongju-si, KR;
Hyung-Suk Choi, Cheongju-si, KR;
Ju-Ho Kim, Cheongju-si, KR;
Jin-Young Chae, Cheongwon-gun, KR;
In-Taek Oh, Cheongju-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01);
Abstract
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.