The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 26, 2008
Applicants:

Chang-bum Lee, Busan, KR;

Young-soo Park, Seoul, KR;

Myung-jae Lee, Suwon-si, KR;

Xianyu Wenxu, Yongin-si, KR;

Bo-soo Kang, Seoul, KR;

Seung-eon Ahn, Seoul, KR;

Ki-hwan Kim, Daejeon, KR;

Inventors:

Chang-bum Lee, Busan, KR;

Young-soo Park, Seoul, KR;

Myung-jae Lee, Suwon-si, KR;

Xianyu Wenxu, Yongin-si, KR;

Bo-soo Kang, Seoul, KR;

Seung-eon Ahn, Seoul, KR;

Ki-hwan Kim, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/24 (2013.01); G11C 2213/72 (2013.01); G11C 2213/71 (2013.01); G11C 2213/34 (2013.01); G11C 13/0007 (2013.01); G11C 13/00 (2013.01);
Abstract

A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.


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