The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Nov. 16, 2012
Applicant:
Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;
Inventors:
Jonathan Abrokwah, Fort Collins, CO (US);
Nathan Perkins, Fort Collins, CO (US);
John Stanback, Fort Collins, CO (US);
Philbert Marsh, Fort Collins, CO (US);
Hans G. Rohdin, Los Altos, CA (US);
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/20 (2013.01);
Abstract
A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.