The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jun. 11, 2012
Applicant:
Shigeru Kusunoki, Tokyo, JP;
Inventor:
Shigeru Kusunoki, Tokyo, JP;
Assignee:
Mitsubishi Electric Company, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7817 (2013.01); H01L 29/405 (2013.01); H01L 29/7824 (2013.01); H01L 29/7397 (2013.01); H01L 28/20 (2013.01); H01L 21/823814 (2013.01); H03K 17/08 (2013.01); H01L 29/0696 (2013.01); H01L 29/0619 (2013.01); H01L 27/0921 (2013.01); H01L 29/404 (2013.01); H01L 21/823878 (2013.01); H01L 29/0638 (2013.01); H01L 29/407 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.