The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Apr. 25, 2012
Rongming Chu, Newbury Park, CA (US);
David F. Brown, Woodland Hills, CA (US);
Xu Chen, San Antonio, TX (US);
Adam J. Williams, Santa Paula, CA (US);
Karim S. Boutros, Moorpark, CA (US);
Rongming Chu, Newbury Park, CA (US);
David F. Brown, Woodland Hills, CA (US);
Xu Chen, San Antonio, TX (US);
Adam J. Williams, Santa Paula, CA (US);
Karim S. Boutros, Moorpark, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.