The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Nov. 12, 2013
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Hsi-Ming Chang, Taoyuan County, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Abstract
An oxide semiconductor thin film transistor (TFT) substrate includes a substrate, a source, a drain, a patterned transparent conductive layer, an oxide semiconductor layer, a gate and a gate dielectric layer. The source and drain are disposed on the substrate. The patterned transparent conductive layer includes a first transparent electrode, a second transparent electrode and a pixel electrode. The first and second transparent electrodes respectively cover an upper surface of the source and an upper surface of the drain. The pixel electrode connects to the drain. The oxide semiconductor layer contacts the first and second transparent electrodes. The gate dielectric layer is interposed between the oxide semiconductor layer and the gate.