The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 26, 2013
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Kenichi Okazaki, Tochigi, JP;
Takuya Matsuo, Osaka, JP;
Yoshitaka Yamamoto, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
To inhibit a metal element contained in a glass substrate from being diffused into a gate insulating film or an oxide semiconductor film. A semiconductor device includes a glass substrate, a base insulating film formed using metal oxide over the glass substrate, a gate electrode formed over the base insulating film, a gate insulating film formed over the gate electrode, an oxide semiconductor film which is formed over the gate insulating film and overlapping with the gate electrode, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In a region of the base insulating film that is present in a range of 3 nm or less from a surface of the base insulating film, the concentration of a metal element contained in the glass substrate is less than or equal to 1×10atoms/cm.