The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Oct. 12, 2007
Applicants:

Aya Hino, Kobe, JP;

Hiroshi Gotou, Kobe, JP;

Inventors:

Aya Hino, Kobe, JP;

Hiroshi Gotou, Kobe, JP;

Assignee:

Kobe Steel, Ltd., Kobe-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/66765 (2013.01); H01L 23/53233 (2013.01); H01L 27/124 (2013.01);
Abstract

A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.


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