The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Nov. 16, 2012
Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Doo Hyoung Lee, Suwon-si, KR;

Chan Woo Yang, Siheung-si, KR;

Seung-Ho Jung, Yongin-si, KR;

Doo Na Kim, Seongnam-si, KR;

Bo Sung Kim, Seoul, KR;

Eun Hye Park, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01B 1/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/66969 (2013.01); H01B 1/06 (2013.01);
Abstract

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.


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