The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Mar. 03, 2011
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: InGaO(ZnO), where x and y satisfy 0.2<x<1 and 0.5≦y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.