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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8853671 B1

PDFFull Text
Date of Patent:
Oct. 07, 2014

Filed:

Oct. 22, 2012

Nanorod light emitting device and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Nam-Goo Cha, Gyeonggi-do, KR;

Geon-Wook Yoo, Gyeonggi-do, KR;

Han-Kyu Seong, Seoul, KR;

Sam-Mook Kang, Gyeonggi-do, KR;

Hun-Jae Chung, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Hung Vu

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/18 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 33/385 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/007 (2013.01); H01L 33/44 (2013.01);
Abstract

A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.

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Quick Actions:

Cha, Nam-Goo. (2014). Nanorod light emitting device and method of manufacturing the same (U.S. Patent No. 8853671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8853671

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