The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Oct. 26, 2011
Applicants:

James S. Speck, Goleta, CA (US);

Anurag Tyagi, Goleta, CA (US);

Steven P. Denbaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Inventors:

James S. Speck, Goleta, CA (US);

Anurag Tyagi, Goleta, CA (US);

Steven P. Denbaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); H01L 33/12 (2010.01); H01L 29/04 (2006.01); H01L 33/00 (2010.01); B82Y 20/00 (2011.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01S 2304/12 (2013.01); H01S 5/34333 (2013.01); H01L 33/16 (2013.01); H01L 33/0075 (2013.01); H10S 5/3202 (2013.01); H01S 5/3201 (2013.01); B82Y 20/00 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.


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