The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 19, 2011
Applicants:

Kyung-ho Lee, Bucheon-si, KR;

Hoon-sang OH, Seongnam-si, KR;

Jung-chak Ahn, Yongin-si, KR;

Inventors:

Kyung-ho Lee, Bucheon-si, KR;

Hoon-sang Oh, Seongnam-si, KR;

Jung-chak Ahn, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14616 (2013.01); H01L 27/14641 (2013.01); H01L 27/14614 (2013.01);
Abstract

An image sensor cell, wherein at least one of a plurality of transistors included in image sensor cell is a recess transistor having a channel region recessed into a substrate. The image sensor cell includes an image charge generating unit for generating an image charge corresponding to an image signal, and an image charge converting unit for converting the image charge into an electrical signal, wherein at least one of a plurality of transistors included in the image charge converting unit is a recess transistor including a channel region that is recessed into a substrate.


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