The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 15, 2008
Applicant:
Henry Hieslmair, San Francisco, CA (US);
Inventor:
Henry Hieslmair, San Francisco, CA (US);
Assignee:
NanoGram Corporation, Milpitas, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/042 (2014.01); H01L 31/068 (2012.01); H01L 31/05 (2014.01); H01L 31/061 (2012.01); H01L 31/18 (2006.01); H01L 27/142 (2014.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0682 (2013.01); H01L 31/042 (2013.01); G01R 31/2605 (2013.01); H01L 31/0504 (2013.01); H01L 31/061 (2013.01); H01L 31/1804 (2013.01); H01L 27/1422 (2013.01); H01L 31/022441 (2013.01); Y02E 10/547 (2013.01);
Abstract
Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.