The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 21, 2012
Thomas Scharnagl, Tiefenbach, DE;
Berthold Staufer, Moosburg, DE;
Thomas Scharnagl, Tiefenbach, DE;
Berthold Staufer, Moosburg, DE;
Texas Instruments Deutschland GmbH, Freising, DE;
Abstract
A method for manufacturing a semiconductor structure comprising complementary bipolar transistors, wherein for manufacture of a PNP-type structure, an emitter layer having a surface oxide layer is present on top of an NPN-type structure, the emitter layer comprising lateral and vertical surfaces, and wherein for removal of the oxide layer, an ion etching step is applied, wherein for the on etching step a plasma for providing ions is generated in a vacuum chamber by RF coupling and the generated ions are accelerated by an acceleration voltage between the plasma and a wafer comprising the semiconductor structure, and wherein the plasma generation and the ion acceleration are controlled independently from each other.