The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Mar. 15, 2013
Ipenval Consultant Inc., Hsinchu, TW;
Chao-Yuan Huang, Hsinchu, TW;
Yueh-Feng Ho, Hsinchu, TW;
Ming-Sheng Yang, Hsinchu, TW;
Hwi-Huang Chen, Hsinchu, TW;
IPEnval Consultant Inc., Hsinchu, TW;
Abstract
A method for fabricating a through-silicon via comprises the following steps. Provide a substrate. Form a through silicon hole in the substrate having a diameter of at least 1 μm and a depth of at least 5 μm. Perform a first chemical vapor deposition process with a first etching/deposition ratio to form a dielectric layer lining the bottom and sidewall of the through silicon hole and the top surface of the substrate. Perform a shape redressing treatment with a second etching/deposition ratio to change the profile of the dielectric layer. Repeat the first chemical vapor deposition process and the shape redressing treatment at least once until the thickness of the dielectric layer reaches to a predetermined value.