The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Sep. 21, 2011
Applicants:
Jaeseok Kim, Seoul, KR;
Ho Young Kim, Seongnam-si, KR;
Inventors:
Jaeseok Kim, Seoul, KR;
Ho Young Kim, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/3205 (2013.01);
Abstract
Methods are provided for forming gates in gate-last processes. The methods may include performing chemical mechanical polishing (CMP) on an interlayer dielectric (ILD) that is on a plurality of dummy gates, each of the plurality of dummy gates including a gate mask in an upper portion thereof, and the CMP exposing the gate mask. The methods may also include removing the gate mask by etching the gate mask. The methods may further include performing CMP on the ILD.