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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8853010 B1

PDFFull Text
Date of Patent:
Oct. 07, 2014

Filed:

Feb. 08, 2012

Semiconductor device and method of fabricating the same

Applicants:

Heung-kyu Park, Gyeongbuk, KR;

Woo-bin Song, Hwaseong-si, KR;

Nam-kyu Kim, Yongin-si, KR;

Su-jin Jung, Suwon-si, KR;

Byeong-chan Lee, Yongin-si, KR;

Young-pil Kim, Hwaseong-si, KR;

Sun-ghil Lee, Hwaseong-si, KR;

Inventors:

Heung-Kyu Park, Gyeongbuk, KR;

Woo-Bin Song, Hwaseong-si, KR;

Nam-Kyu Kim, Yongin-si, KR;

Su-Jin Jung, Suwon-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Young-Pil Kim, Hwaseong-si, KR;

Sun-Ghil Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Onello & Mello, LLP

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01); H01L 21/337 (2006.01); H01L 21/338 (2006.01); H01L 21/339 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 29/165 (2013.01); H01L 29/78 (2013.01); H01L 29/66651 (2013.01); H01L 29/66621 (2013.01); H01L 29/7848 (2013.01); H01L 21/823814 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region.

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