The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jan. 23, 2013
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu, JP;

Inventors:

Syota Shimonishi, Kiyosu, JP;

Hiroyuki Tajima, Kiyosu, JP;

Yosuke Tsuchiya, Kiyosu, JP;

Akira Sengoku, Kiyosu, JP;

Assignee:

Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/0132 (2013.01); H01L 24/29 (2013.01); H01L 24/13 (2013.01); H01L 2224/49107 (2013.01); H01L 24/32 (2013.01); H01L 2224/45144 (2013.01); H01L 24/08 (2013.01); H01L 24/48 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/1033 (2013.01); H01L 2224/92247 (2013.01); H01L 24/49 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/83192 (2013.01); H01L 2924/01322 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/81193 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au—Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.


Find Patent Forward Citations

Loading…