The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Aug. 06, 2013
Atomic Energy Council—institute of Nuclear Energy Research, Taoyuan County, TW;
Yu-Han Su, Taoyuan County, TW;
Tsun-Neng Yang, Taoyuan County, TW;
Wei-Yang Ma, Taoyuan County, TW;
Chien-Chang Chao, Taoyuan County, TW;
Shan-Ming Lan, Taoyuan County, TW;
Atomic Energy Council-Institute of Nuclear Energy Research, Taoyuan County, TW;
Abstract
The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.