The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
May. 11, 2011
Woo-su Lee, Yongin-si, KR;
Sang-cheol Park, Seoul, KR;
Byoung-dong Kim, Asan-si, KR;
Jung-gyu Nam, Suwon-si, KR;
Gug-il Jun, Hwaseong-si, KR;
Dong-gi Ahn, Seoul, KR;
In-ki Kim, Seoul, KR;
Woo-Su Lee, Yongin-si, KR;
Sang-Cheol Park, Seoul, KR;
Byoung-Dong Kim, Asan-si, KR;
Jung-Gyu Nam, Suwon-si, KR;
Gug-Il Jun, Hwaseong-si, KR;
Dong-Gi Ahn, Seoul, KR;
In-Ki Kim, Seoul, KR;
Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a solar cell having increased light efficiency due to increased gallium distribution on a surface of a light absorption layer, the method including forming a first electrode on a substrate, forming a precursor that includes at least one of copper, gallium, and indium on the first electrode, forming a preliminary light absorption layer by providing selenium to the precursor, forming the preliminary light absorption layer further including performing a heat treatment, and forming a liquid state CuSe compound, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer.