The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Dec. 06, 2012
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Chien-Fu Huang, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Yi-Tang Lai, Hsinchu, TW;
Chia-Liang Hsu, Hsinchu, TW;
Tsung-Hsien Yang, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01);
Abstract
A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.