The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Oct. 24, 2012
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Steven Verhaverbeke, San Francisco, CA (US);
Roman Gouk, San Jose, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Mei-yee Shek, Palo Alto, CA (US);
Yu Jin, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); G11B 5/74 (2006.01); G11B 5/84 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/033 (2006.01); H01F 41/34 (2006.01);
U.S. Cl.
CPC ...
H01F 41/34 (2013.01); G11B 5/743 (2013.01); G11B 5/84 (2013.01); H01L 21/67161 (2013.01); H01L 21/67736 (2013.01); H01L 21/0332 (2013.01);
Abstract
Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.