The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
May. 10, 2012
Applicant:
Wensheng Wang, Kawasaki, JP;
Inventor:
Wensheng Wang, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 27/115 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 28/57 (2013.01); H01L 21/76802 (2013.01); H01L 2924/19041 (2013.01); H01L 24/05 (2013.01); H01L 2224/02126 (2013.01); H01L 2924/30105 (2013.01); H01L 21/76829 (2013.01); H01L 21/76814 (2013.01); H01L 2224/05624 (2013.01); H01L 27/11502 (2013.01); H01L 28/75 (2013.01); H01L 27/11507 (2013.01); H01L 21/76826 (2013.01);
Abstract
Ferroelectric capacitors () are formed over a semiconductor substrate (), then, a barrier film () directly covering the ferroelectric capacitors () is formed. Thereafter, wirings (etc.) connected to the ferroelectric capacitors () are formed. Further, a barrier film () is formed at a position higher than the wirings (etc.). In forming the barrier film (), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (and) having different components and preventing diffusion of hydrogen or water.