The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 30, 2009
Applicants:

Michael A. Huff, Oakton, VA (US);

Paul Sunal, Arlington, VA (US);

Inventors:

Michael A. Huff, Oakton, VA (US);

Paul Sunal, Arlington, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 1/00 (2006.01); H01L 23/373 (2006.01); C22C 1/04 (2006.01); H01L 23/473 (2006.01); H01S 5/024 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
C22C 1/00 (2013.01); H01L 23/3736 (2013.01); C22C 1/045 (2013.01); H01S 5/02476 (2013.01); H01S 5/02423 (2013.01); H01S 5/4025 (2013.01); H01L 23/473 (2013.01);
Abstract

The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials. The present invention also describes a number of useful configurations wherein the TiW material is made as well as how it can be shaped, formed and polished into heat sink, heat spreaders, and electrodes for many applications. The present invention also discloses the direct bonding of a TiW substrate to a semiconductor substrate.


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