The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Sep. 15, 2006
Juan Chacin, Palo Alto, CA (US);
Roger Anderson, Sunnyvale, CA (US);
Kailash Patalay, Santa Clara, CA (US);
Craig Metzner, Fremont, CA (US);
Juan Chacin, Palo Alto, CA (US);
Roger Anderson, Sunnyvale, CA (US);
Kailash Patalay, Santa Clara, CA (US);
Craig Metzner, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.