The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Mar. 07, 2012
Applicant:

Mitsunori Harada, Tokyo, JP;

Inventor:

Mitsunori Harada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21V 9/16 (2006.01); F21S 8/10 (2006.01); F21W 131/103 (2006.01); F21Y 101/02 (2006.01); F21W 131/406 (2006.01);
U.S. Cl.
CPC ...
F21V 9/16 (2013.01); F21W 2131/103 (2013.01); F21S 48/1145 (2013.01); F21Y 2101/025 (2013.01); F21W 2131/406 (2013.01);
Abstract

A semiconductor light source apparatus can include a clad layer, a phosphor layer surrounded by the clad layer and a laser diode emitting a laser light. The phosphor layer can include a cavity having an opening for receiving the laser light, a phosphor material and a light-emitting surface of the apparatus. The laser light entering into the cavity can repeatedly reflect on an inner surface of the phosphor layer many times, each and every time most of the laser light entering into the phosphor layer. The laser light can be efficiently wavelength-converted by the phosphor material and the wavelength converted light can be emitted from the light-emitting surface having various shapes exposed from the clad layer. Therefore, the disclosed subject matter can include providing semiconductor light source apparatuses having a high light-emitting efficiency and high light-emitting density such that the devices can be used for a headlight, general lighting, etc.


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