The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Aug. 30, 2012
Applicants:

Jun Deguchi, Kawasaki, JP;

Shouhei Kousai, Yokohama, JP;

Yousuke Hagiwara, Kawasaki, JP;

Masamichi Suzuki, Tokyo, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Takao Marukame, Yokohama, JP;

Inventors:

Jun Deguchi, Kawasaki, JP;

Shouhei Kousai, Yokohama, JP;

Yousuke Hagiwara, Kawasaki, JP;

Masamichi Suzuki, Tokyo, JP;

Atsuhiro Kinoshita, Kamakura, JP;

Takao Marukame, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/38 (2006.01); H03M 1/66 (2006.01); H03M 1/10 (2006.01); H03M 1/74 (2006.01);
U.S. Cl.
CPC ...
H03M 1/66 (2013.01); H03M 1/745 (2013.01); H03M 1/1061 (2013.01);
Abstract

In general, according to one embodiment, a DA converter configured to convert a digital signal comprising n (n>1) bits to an analog current to output the analog current from an output terminal, includes n voltage-current converters. Each of them corresponds to each bit of the digital signal and is configured to generate a current depending on the corresponding bit. A k-th (k is an integer of 0 to n−1) voltage-current converter includes a first transistor whose threshold voltage is adjustable. The first transistor includes a semiconductor substrate, a first diffusion region, a second diffusion region, an insulating film, a charge accumulating film, and a gate.


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