Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region

Abstract

Provided is an optical sensor having such a novel structure that even if an intrinsic semiconductor region has a short substantial length in a direction parallel with a forward direction of a photodiode, a light receiving area can be ensured, whereby light detection sensitivity can be improved; and a liquid crystal panel including the optical sensor. The optical sensor includes: a photodiode () provided with a semiconductor film () having a p-type semiconductor region (), an intrinsic semiconductor region (), and an n-type semiconductor region (); a first gate line () formed above the intrinsic semiconductor region (), a negative voltage being applied to the first gate line; and a second gate line () formed above the intrinsic semiconductor region (), a positive voltage being applied to the second gate line, wherein a predetermined clearance is formed between the first gate line () and the second gate line (), above the intrinsic semiconductor region ().