The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Feb. 29, 2012
Applicants:
Osamu Fujita, Tokyo, JP;
Yuki Togashi, Tokyo, JP;
Inventors:
Osamu Fujita, Tokyo, JP;
Yuki Togashi, Tokyo, JP;
Assignee:
PS4 Luxco S.A.R.L., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 24/16 (2013.01); H01L 2224/13025 (2013.01); H01L 21/76898 (2013.01); H01L 25/50 (2013.01); H01L 24/05 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/1436 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/17181 (2013.01); H01L 2221/6834 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13111 (2013.01); H01L 24/13 (2013.01); H01L 21/30655 (2013.01); H01L 2224/06181 (2013.01); H01L 2225/06517 (2013.01); H01L 2224/13009 (2013.01); H01L 2225/06565 (2013.01); H01L 2224/13021 (2013.01); H01L 2924/1431 (2013.01); H01L 24/11 (2013.01); H01L 2225/06541 (2013.01); H01L 21/76232 (2013.01); H01L 2224/13147 (2013.01); H01L 2225/06513 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/14181 (2013.01); H01L 24/17 (2013.01); H01L 21/76895 (2013.01); H01L 2224/16245 (2013.01); H01L 24/06 (2013.01); H01L 2224/16225 (2013.01); H01L 24/03 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/0401 (2013.01); H01L 2221/68327 (2013.01); H01L 2924/1461 (2013.01); H01L 2225/06544 (2013.01);
Abstract
A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.