The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 05, 2011
Eiichi Ide, Hitachi, JP;
Shinji Hiramitsu, Kashiwa, JP;
Hiroshi Hozoji, Hitachiota, JP;
Nobutake Tsuyuno, Naka-gun, JP;
Kinya Nakatsu, Hitachinaka, JP;
Takeshi Tokuyama, Hitachi, JP;
Akira Matsushita, Hitachinaka, JP;
Yusuke Takagi, Hitachinaka, JP;
Eiichi Ide, Hitachi, JP;
Shinji Hiramitsu, Kashiwa, JP;
Hiroshi Hozoji, Hitachiota, JP;
Nobutake Tsuyuno, Naka-gun, JP;
Kinya Nakatsu, Hitachinaka, JP;
Takeshi Tokuyama, Hitachi, JP;
Akira Matsushita, Hitachinaka, JP;
Yusuke Takagi, Hitachinaka, JP;
Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;
Abstract
A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.