The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Aug. 09, 2012
Sukhjiban Dosanjh, Ipswich, GB;
Ian Lealman, Ipswich, GB;
Gordon Burns, Ipswich, GB;
Michael Robertson, Ipswich, GB;
Sukhjiban Dosanjh, Ipswich, GB;
Ian Lealman, Ipswich, GB;
Gordon Burns, Ipswich, GB;
Michael Robertson, Ipswich, GB;
The Centre for Intergrated Photonics Limited, Ipswich, GB;
Abstract
The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 μm thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 μm.