The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Feb. 12, 2010
Applicants:

Guy Klemens, San Diego, CA (US);

Thomas a Myers, San Diego, CA (US);

Norman L Frederick, Jr., Vista, CA (US);

Yu Zhao, San Diego, CA (US);

Babak Nejati, San Diego, CA (US);

Nathan M Pletcher, Encinitas, CA (US);

Aristotele Hadjichristos, San Diego, CA (US);

Inventors:

Guy Klemens, San Diego, CA (US);

Thomas A Myers, San Diego, CA (US);

Norman L Frederick, Jr., Vista, CA (US);

Yu Zhao, San Diego, CA (US);

Babak Nejati, San Diego, CA (US);

Nathan M Pletcher, Encinitas, CA (US);

Aristotele Hadjichristos, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A compact integrated power amplifier is described herein. In an exemplary design, an apparatus includes (i) an integrated circuit (IC) die having at least one transistor for a power amplifier and (ii) an IC package having a load inductor for the power amplifier. The IC die is mounted on the IC package with the transistor(s) located over the load inductor. In an exemplary design, the IC die includes a transistor manifold that is placed over the load inductor on the IC package. The transistor(s) are fabricated in the transistor manifold, have a drain connection in the center of the transistor manifold, and have source connections on two sides of the transistor manifold. The IC die and the IC package may include one or more additional power amplifiers. The transistor(s) for each power amplifier may be located over the load inductor for that power amplifier.


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