The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Dec. 19, 2012
Seiko Instruments Inc., Chiba, JP;
Masayuki Hashitani, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
An oxide film is formed by STI in a silicon surface region in which a substrate potential heavily doped diffusion layer and a source heavily doped diffusion layer are to be provided later between trenches at predetermined intervals. The oxide film is removed after the trench is formed, to thereby form a region which is lower than a surrounding surface. Thus, in the vertical MOS transistor having a trench structure which includes a side spacer, a silicide on a gate electrode embedded in the trench and a silicide on the substrate potential heavily doped diffusion layer and the source heavily doped diffusion layer can be separated from each other.