The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jan. 04, 2012
Sung-shan Tai, San Jose, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hong Chang, Cupertino, CA (US);
John Chen, Palo Alto, CA (US);
Sung-Shan Tai, San Jose, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hong Chang, Cupertino, CA (US);
John Chen, Palo Alto, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A body layer is formed in the substrate. A source is formed in the body layer. A second insulator layer is formed on the trenches and source. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on the second insulator layer. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.