The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Dec. 23, 2010
Hong-ki Kim, Hwaseong-si, KR;
Ho-kyu Kang, Yongin-si, KR;
June-taeg Lee, Suwon-si, KR;
Jae-hee Choi, Hwaseong-si, KR;
Hong-Ki Kim, Hwaseong-si, KR;
Ho-Kyu Kang, Yongin-si, KR;
June-Taeg Lee, Suwon-si, KR;
Jae-Hee Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.