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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8847292 B1

PDFFull Text
Date of Patent:
Sep. 30, 2014

Filed:

Jun. 18, 2007

Method for manufacturing semiconductor device and semiconductor device

Applicant:

Shinpei Yamaguchi, Tokyo, JP;

Inventor:

Shinpei Yamaguchi, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Dentons US LLP

Primary Examiner:

David Vu

Assistant Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/66545 (2013.01); H01L 29/517 (2013.01); H01L 29/4958 (2013.01); H01L 21/28079 (2013.01);
Abstract

Disclosed herein is a method for manufacturing a semiconductor device, the method including the step of forming a gate electrode that contains a metal over a semiconductor substrate with intermediary of a gate insulating film, the step including the sub-steps of, forming a first gate electrode layer that defines a work function of the gate electrode on the gate insulating film, forming a second gate electrode layer that has a barrier property for underlayers on the first gate electrode layer, and forming a third gate electrode layer of which resistance is lower than a resistance of the first gate electrode layer on the second gate electrode layer by chemical vapor deposition.

Find Patent Forward Citations

Yamaguchi, Shinpei. (2014). Method for manufacturing semiconductor device and semiconductor device (U.S. Patent No. 8847292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8847292

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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