The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Jan. 03, 2008
Applicants:

Pun Jae Choi, Gyunggi-do, KR;

Ki Yeol Park, Daegu, KR;

Sang Bum Lee, Gyunggi-do, KR;

Seon Young Myoung, Gyunggi-do, KR;

Myong Soo Cho, Gyunggi-do, KR;

Inventors:

Pun Jae Choi, Gyunggi-do, KR;

Ki Yeol Park, Daegu, KR;

Sang Bum Lee, Gyunggi-do, KR;

Seon Young Myoung, Gyunggi-do, KR;

Myong Soo Cho, Gyunggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/20 (2013.01);
Abstract

There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.


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