The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Mar. 14, 2013
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Junya Narita, Yoshinogawa, JP;

Takuya Okada, Tokushima, JP;

Yohei Wakai, Anan, JP;

Yoshiki Inoue, Anan, JP;

Naoya Sako, Anan, JP;

Katsuyoshi Kadan, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/007 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 33/32 (2013.01); H01L 21/02458 (2013.01); H01L 33/20 (2013.01);
Abstract

A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis 'a' of the sapphire substrate.


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