The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Dec. 28, 2012
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Jun Zhu, Beijing, CN;
Hao-Su Zhang, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Guo-Fan Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/04 (2010.01); H01L 29/06 (2006.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 33/22 (2013.01); H01L 33/04 (2013.01); H01L 33/44 (2013.01);
Abstract
A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, a metallic plasma generating layer, and a first optical symmetric layer stacked in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.