The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jun. 30, 2009
Applicants:
Yu-chen Shen, Sunnyvale, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Satoshi Watanabe, Cupertino, CA (US);
Michael R. Krames, Mountain View, CA (US);
Gerd O. Mueller, San Jose, CA (US);
Inventors:
Yu-Chen Shen, Sunnyvale, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Satoshi Watanabe, Cupertino, CA (US);
Michael R. Krames, Mountain View, CA (US);
Gerd O. Mueller, San Jose, CA (US);
Assignee:
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/04 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/06 (2013.01);
Abstract
A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.