The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Mar. 31, 2011
Applicants:

Bernd Kloth, Birkenwerder, DE;

Vera Abrosimova, Berlin, DE;

Torsten Trenkler, Berlin, DE;

Inventors:

Bernd Kloth, Birkenwerder, DE;

Vera Abrosimova, Berlin, DE;

Torsten Trenkler, Berlin, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/0095 (2013.01); H01L 27/156 (2013.01);
Abstract

The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer () of the first conductivity type is provided between a substrate () and a first barrier layer (). A first contact layer () has at least one emitting surface () via which radiation emitted by an active layer () exits the LED. The emitting surfaces () are electrically and optically isolated from one another by surface implanted regions () in the first contact layer () which are irradiated with electric charge carriers. The areas of the layers located below the emitting surface () starting from the first contact layer () and proceeding as far as at least through the active layer () are electrically and optically isolated with respect to areas of the layers not located below the emitting surface () by means of first deep implanted regions () irradiated with electric charge carriers.


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